Infineon Technologies has developed the world’s first 300 mm gallium nitride (GaN) wafer technology, marking a significant milestone in the power semiconductor industry. By leveraging its existing 300 mm silicon manufacturing infrastructure, Infineon has created a scalable, high-volume production process that enhances cost-efficiency.
The 300 mm GaN wafers offer 2.3 times more chips per wafer compared to 200 mm wafers, improving production efficiency and device performance. This innovation positions Infineon as a leader in the rapidly growing GaN market, which is projected to reach several billion dollars by the end of the decade.
Infineon CEO Jochen Hanebeck showcases one of the first 300 mm GaN power wafers, produced in a scalable high-volume manufacturing setting. (Image: Infineon)
GaN-based power semiconductors are gaining traction across various sectors, including industrial, automotive, consumer electronics, AI power supplies, solar inverters, and motor-control systems. GaN technology offers significant advantages, such as increased energy efficiency, reduced size and weight, and lower overall costs for end users. The new 300 mm GaN wafers ensure greater supply stability and scalability, making them ideal for growing market demands.
Infineon’s integration of 300 mm GaN wafers into its existing silicon production lines in Villach, Austria, demonstrates the company’s expertise in both GaN and silicon-based semiconductors. This breakthrough also paves the way for cost parity between GaN and silicon, particularly in terms of comparable R DS(on) levels. Infineon aims to showcase the first 300 mm GaN wafers at the electronica trade show in November 2024 in Munich.
A technical engineer in Infineon Technologies’ cleanroom in Villach, Austria, holds a 300 mm gallium nitride wafer. (Image: Infineon)
This advancement reinforces Infineon’s leadership in power systems and its commitment to innovation, particularly in the fields of decarbonization and digitalization. The company’s strategic focus on GaN, alongside silicon and silicon carbide, highlights its position at the forefront of semiconductor technology.
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